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PDN3911S - P-Channel MOSFETs

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V,-4.1A, RDS(ON) =55mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDN3911S
Manufacturer Potens semiconductor
File Size 821.73 KB
Description P-Channel MOSFETs
Datasheet download datasheet PDN3911S Datasheet

Full PDF Text Transcription for PDN3911S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PDN3911S. For precise diagrams, and layout, please refer to the original PDF.

30V P-Channel MOSFETs PDN3911S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technol...

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ct transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D S G G D S BVDSS -30V RDSON 55m ID -4.1A Features  -30V,-4.1A, RDS(ON) =55mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.

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