* 30V, 5.3 A, RDS(ON) =32mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 2.5V Gate Drive Applications A.

SOT23-3S Pin Configuration D D S G G S BVDSS 30V RDSON 32mΩ ID 5.3A Features
* 30V, 5.3 A, RDS(ON) =32mΩ@V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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