PDN3911S Datasheet (Potens semiconductor)

PDN3911S, P-Channel MOSFETs

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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PDN3911S Features

* -30V,-4.1A, RDS(ON) =55mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications

* RoHS compliant & Halogen Free Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings T