PDN3916S Datasheet (Potens semiconductor)

PDN3916S, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDN3916S Features

* 30V,5.1A , RDS(ON)=35mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* Load Switch

* Hand-Held Instrument Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Paramet