PDN3909S Datasheet - Potens semiconductor

PDN3909S P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDN3909S Features

* -30V,-5.1A, RDS(ON) =32mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol

PDN3909S Datasheet (937.88 KB)

PDN3909S Datasheet Preview — Preview of PDN3909S PDF

Datasheet Details

Part number:

PDN3909S

Manufacturer:

Potens semiconductor

File Size:

937.88 KB

Description:

P-channel mosfet.

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PDN3909S P-Channel MOSFET Potens semiconductor

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