* -30V,-4.1A, RDS(ON) =55mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications
* RoHS compliant & Halogen F.

SOT23-3S Pin Configuration D S G G D S BVDSS -30V RDSON 55m ID -4.1A Features
* -30V,-4.1A, RDS(ON) =55mΩ@.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts