PDN3909S datasheet, mosfet equivalent, Potens semiconductor

Features and benefits

* -30V,-5.1A, RDS(ON) =32mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* Notebook
.

Application

SOT23-3S Pin Configuration D D S G G S BVDSS -30V RDSON 32m ID -5.1A Features
* -30V,-5.1A, RDS(ON) =32mΩ@.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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