PDEW2210 Datasheet, Potens semiconductor

* 20V, 7.5A, RDS(ON)=12mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications
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TSSOP8 Dual Pin Configuration G2 S2 S2 D1/D2 G1 S1 S1 D1/D2 PDEW2210 BVDSS 20V RDSON 12m ID 7.5A Features
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These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.