PDEB3907Z datasheet, mosfet equivalent, Potens semiconductor

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datasheet Download (Size : 800.42KB)

Features and benefits

* -30V,-30A, RDS(ON) =20mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* MB / VGA / Vc.

Application

DFN3x3 Pin Configuration DDD D S SSG G D BVDSS -30V RDSON 20m ID -30A Features
* -30V,-30A, RDS(ON) =20mΩ@.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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