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PDEB3907Z - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V,-30A, RDS(ON) =20mΩ@VGS = -10V.
  • Fast switching.
  • Green Device Available.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number PDEB3907Z
Manufacturer Potens semiconductor
File Size 800.42 KB
Description P-Channel MOSFET
Datasheet download datasheet PDEB3907Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary datasheet 30V P-Channel MOSFETs PDEB3907Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN3x3 Pin Configuration DDD D S SSG G D BVDSS -30V RDSON 20m ID -30A Features  -30V,-30A, RDS(ON) =20mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.
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