* 30V, 80A, RDS(ON) =5.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
* G-S ESD Protect.

PPAK5x6 Pin Configuration DDDD SSSG G D S BVDSS 30V RDSON 5.5mΩ ID 80A Features
* 30V, 80A, RDS(ON) =5.5mΩ@.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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