PDEW2206 - Dual N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

20V, 10A, RDS(ON)=9mΩ@VGS=4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for 1.8V Gate Drive.

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PDEW2206 dual n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDEW2206
Manufacturer	Potens semiconductor
File Size	660.67 KB
Description	Dual N-Channel MOSFETs
Datasheet	PDEW2206 Datasheet

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20V Dual N-Channel MOSFETs PDEW2206 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TSSOP8 Dual Pin Configuration G2 S2 S2 D1/D2 G1 S1 S1 D1/D2 BVDSS 20V RDSON 9m ID 10A Features  20V, 10A, RDS(ON)=9mΩ@VGS=4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.