* 20V,11A, RDS(ON) =10mΩ @VGS = 10V
* Improved dv/dt capability
* ESD Protection Diode Embedded
* Green Device Available Applications
* MB / VGA / Vc.

DFN2x2 6L Pin Configuration D DD SSG D G D S PDEB2310Y V BVDSS RDSON ID 20V 10m 11A Features
* 20V,11A, .

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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