PDEB2310Y
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN2x2 6L Pin Configuration
D DD SSG
BVDSS RDSON
20V 10m 11A
Features
- 20V,11A, RDS(ON) =10mΩ @VGS = 10V
- Improved dv/dt capability
- ESD Protection Diode Embedded
- Green Device Available
Applications
- MB / VGA / Vcore
- POL Applications
- SMPS 2nd SR
- Li-Battery Protection
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous (TC=25℃) (Chip Limitation) Drain Current
- Continuous (TC=100℃)...
