* -30V,-4.7A, RDS(ON) =55mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* Notebook
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DFN2x2-6L 2EP Pin Configuration DDS S S DD D G D BVDSS -30V RDSON 55m ID -4.7A Features
* -30V,-4.7A, RDS.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDB3910L

PDB3912L

PDB3907Z

PDB3909L

PDB3810H

PDB3814S

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

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