* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications ˙ S1 G1.

DFN2X2 Dual 2EP Pin Configuration BVDSS 30V RDSON 30m ID 5.0A Features
* 30V,5.0A, RDS(ON) =30mΩ @VGS = 10V

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDB3810H

PDB3907Z

PDB3909L

PDB3910L

PDB3911L

PDB3912L

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

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