* 30V,8.5A, RDS(ON) =17mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB.

DFN2x2-6L 2EP Pin Configuration DDG DD S S S DD D GDD G D S BVDSS 30V RDSON 17m ID 8.5A Features
* 30V,.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDB3911L

PDB3912L

PDB3907Z

PDB3909L

PDB3810H

PDB3814S

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

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