* -30V,-30A, RDS(ON) =18mΩ@VGS = -10V
* Fast switching
* Green Device Available
* Suit for -4.5V Gate Drive Applications Applications
* MB / VGA / Vco.

DFN3x3 Pin Configuration DDD D S SSG G D BVDSS -30V RDSON 18m ID -30A Features
* -30V,-30A, RDS(ON) =18mΩ@.

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDB3909L

PDB3910L

PDB3911L

PDB3912L

PDB3810H

PDB3814S

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts