* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed D2
* Halogen free Applications
* MB / VGA / Vcore
* POL Buck Applications
*.

Q1 Q2 DFN3x3 Asymmetric Dual Pin Configuration S2 S2 S2 G2 D1 G2 S2 S2 S2 G1D1 D1D1 S1/D2 D1 G1 D1 D1 D1 G1 G2.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

PDB3814S

PDB3907Z

PDB3909L

PDB3910L

PDB3911L

PDB3912L

PDB-C107

PDB-C109

PDB-C110

PDB-C113

PDB-C120

PDB-C122

PDB-C134

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