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PNZ1270 Datasheet

Silicon NPN Phototransistor

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Phototransistors
PNZ1270
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
Unit : mm
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
1
2
1.8 2.8±0.2 1.8
R0.9
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
1 100 nA
Collector photo current
ICE(L)*3 VCE = 10V, L = 1000 lx*1
0.8 19.2 mA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
14
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
2.5
3.5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (mA)
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
1


Panasonic Electronic Components Datasheet

PNZ1270 Datasheet

Silicon NPN Phototransistor

No Preview Available !

Phototransistors
PNZ1270
PC — Ta
60
50
40
30
20
10
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
5
Ta = 25˚C
T = 2856K
4 L =1000 lx
3
2 500 lx
1 250 lx
100 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
ICE(L) — L
10 5
VCE = 10V
Ta = 25˚C
T = 2856K
10 4
10 3
10 2
10
10
10 2 10 3 10 4
Illuminance L (lx)
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
10 5
VCE = 10V
T = 2856K
10 4
10 3
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
60
40
20
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 2
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 2 VCE = 10V
Ta = 25˚C
10
RL = 1k
500
1 100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 2 VCE = 10V
Ta = 25˚C
10
RL = 1k
500
1 100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
2


Part Number PNZ1270
Description Silicon NPN Phototransistor
Maker Panasonic Semiconductor
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