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FODM214 - Phototransistor Optocoupler

Download the FODM214 datasheet PDF (FODM217 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for phototransistor optocoupler.

Features

  • Current Transfer Ratio Ranges from 20 to 600% at IF = ±1 mA, VCE = 5 V, TA = 25°C.
  • FODM214.
  • 20 to 400%.
  • FODM214A.
  • 50 to 250% at IF = 5 mA, VCE = 5 V, TA = 25°C.
  • FODM217A.
  • 80 to 160%.
  • FODM217B.
  • 130 to 260%.
  • FODM217C.
  • 200 to 400%.
  • FODM217D.
  • 300 to 600%.
  • Safety and Regulatory Approvals:.
  • UL1577, 3750 VACRMS for 1 min.
  • DIN EN/IEC60747.
  • 5.
  • 5, 5.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FODM217-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FODM214
Manufacturer onsemi
File Size 240.68 KB
Description Phototransistor Optocoupler
Datasheet download datasheet FODM214 Datasheet

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Other Datasheets by ON Semiconductor
  • FODM217 - Phototransistor Optocoupler
  • FODM291 - Phototransistor Optocoupler
  • FODM291A - Phototransistor Optocoupler
  • FODM291B - Phototransistor Optocoupler
  • FODM291C - Phototransistor Optocoupler
  • FODM291D - Phototransistor Optocoupler
  • FODM181A - Phototransistor Optocoupler
  • FODM181B - Phototransistor Optocoupler

Full PDF Text Transcription

Click to expand full text
DATA SHEET www.onsemi.com Single Channel, AC/DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM214, FODM217 Series The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting diodes connected in inverse parallel for AC operation. Both were built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.
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