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FGY60T120SQDN Datasheet, ON Semiconductor

FGY60T120SQDN igbt equivalent, igbt.

FGY60T120SQDN Avg. rating / M : 1.0 rating-12

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FGY60T120SQDN Datasheet

Features and benefits

a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltag.

Application

offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. .

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching l.

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TAGS

FGY60T120SQDN
IGBT
FGY100T120RWD
FGY100T120SWD
FGY100T65SCDT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)
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