FGY120T65SPD-F085 datasheet, igbt equivalent, ON Semiconductor

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Features and benefits

* Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
* Maximum Junction Temperature : TJ = 175°C
* Positive Temperature Co−efficient
* Tigh.

Application

* Rugged Transient Reliability
* Outstanding Parallel Operation Performance with Balance Current Sharing
* L.

Description

VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage IC INominal ICM IF PD SCWT dV/dt Collector Current (Note 1) Collector Current Nominal Current Pulsed Collector Current Diode Forward Current (Note 1.

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