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FGY4L160T120SWD Datasheet, ON Semiconductor

FGY4L160T120SWD igbt equivalent, n-channel igbt.

FGY4L160T120SWD Avg. rating / M : 1.0 rating-12

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FGY4L160T120SWD Datasheet

Features and benefits


* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Smooth and Optimized .

Application

like Solar Inverter, UPS and ESS. Features
* Maximum Junction Temperature TJ = 175°C
* Positive Temperature Coe.

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L160T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like .

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FGY4L160T120SWD Page 1 FGY4L160T120SWD Page 2 FGY4L160T120SWD Page 3

TAGS

FGY4L160T120SWD
N-Channel
IGBT
FGY40T120SMD
FGY100T120RWD
FGY100T120SWD
ON Semiconductor

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