FGY100T120SWD
FGY100T120SWD is IGBT manufactured by onsemi.
Description
Using the novel field stop 7th generation IGBT technology and the
Gen7 Diode in TO247 3- lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high- efficiency operations in various applications like Solar, UPS, and ESS. Features
- Maximum Junction Temperature TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operation
- High Current Capability
- Smooth and Optimized Switching
- Low Switching Loss
- Ro HS pliant
Applications
- Boost and Inverter in Solar System
- UPS
- Energy Storage System
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector- to- Emitter Voltage Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES
VGES
±20
±30
Collector Current
TC = 25°C
(Note 1)
TC = 100°C
Power Dissipation
TC = 25°C
TC = 100°C
Pulsed Collector Current
TC = 25°C,
ICM t P = 10 ms
(Note...
