FGY100T120SWD - IGBT

onsemi

General Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3 lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high

and ESS.

Key Features

Maximum Junction Temperature TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
Smooth and Optimized Switching.
Low Switching Loss.
RoHS Compliant.

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FGY100T120SWD igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGY100T120SWD
Manufacturer	onsemi
File Size	280.93 KB
Description	IGBT
Datasheet	FGY100T120SWD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Power, Co-PAK N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3L 1200 V, 1.7 V, 100 A FGY100T120SWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar, UPS, and ESS.