Part FGY100T120SWD
Description IGBT
Manufacturer onsemi
Size 280.93 KB
onsemi

FGY100T120SWD Overview

Description

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3-lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS, and ESS. Features - Maximum Junction Temperature TJ = 175°C - Positive Temperature Coefficient for Easy Parallel Operation - High Current Capability - Smooth and Optimized Switching - Low Switching Loss - RoHS Compliant.

Key Features

  • Maximum Junction Temperature TJ = 175°C
  • Positive Temperature Coefficient for Easy Parallel Operation
  • High Current Capability
  • Smooth and Optimized Switching
  • Low Switching Loss
  • RoHS Compliant