FGY100T65SCDT igbt equivalent, igbt.
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co-efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.
where low conduction and switching losses are essential.
Features
* Maximum Junction Temperature: TJ = 175°C
* P.
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.
F.
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