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FGY100T65SCDT Datasheet, ON Semiconductor

FGY100T65SCDT igbt equivalent, igbt.

FGY100T65SCDT Avg. rating / M : 1.0 rating-11

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FGY100T65SCDT Datasheet

Features and benefits


* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co-efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Volt.

Application

where low conduction and switching losses are essential. Features
* Maximum Junction Temperature: TJ = 175°C
* P.

Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential. F.

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TAGS

FGY100T65SCDT
IGBT
FGY100T120RWD
FGY100T120SWD
FGY120T65SPD-F085
ON Semiconductor

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