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FGB40T65SPD-F085 Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - Field Stop, Trench 650 V, 40 A FGB40T65SPD-F085 General.

General Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability.

Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.

Key Features

  • Low Saturation Voltage: VCE(sat) = 2.0 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • Maximum Junction Temperature : TJ = 175°C.
  • Fast Switching.
  • Tight Parameter Distribution.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • Copacked with Soft, Fast Recovery Diode.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.

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FGB40T65SPD-F085 Distributor