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FGB40T65SPD-F085 - IGBT

Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching r

Features

  • Low Saturation Voltage: VCE(sat) = 2.0 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts are Dynamically Tested.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • Maximum Junction Temperature : TJ = 175°C.
  • Fast Switching.
  • Tight Parameter Distribution.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • Copacked with Soft, Fast Recovery Diode.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.

📥 Download Datasheet

Datasheet preview – FGB40T65SPD-F085

Datasheet Details

Part number FGB40T65SPD-F085
Manufacturer onsemi
File Size 1.97 MB
Description IGBT
Datasheet download datasheet FGB40T65SPD-F085 Datasheet
Additional preview pages of the FGB40T65SPD-F085 datasheet.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench 650 V, 40 A FGB40T65SPD-F085 General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation. Features • Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.
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