FGB40T65SPD-F085 datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A
* 100% of the Parts are Dynamically Tested *
* Short Circuit Ruggedness > 5 ms @ 25°C
* Maxi.

Application

while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also of.

Description

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking v.

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