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Fairchild Semiconductor Electronic Components Datasheet

FGB20N60SFD_F085 Datasheet

20A Field Stop IGBT

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FGB20N60SFD_F085
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A
• High input impedance
• Fast switching
• Qualified to Automotive Requirements of AEC-Q101
• RoHS complaint
Applications
• Inverters, SMPS, PFC, UPS
• Automotive Chargers, Converters, High Voltage
Auxiliaries
C
October 2013
General Description
Using novel field-stop IGBT technology, Fairchild’s new series
of field-stop IGBTs offers the optimum performance for
automotive chargers, inverters, and other applications where
low conduction and switching losses are essential.
C
D2-PAK
GE
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
IFM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RθJC(IGBT) ( 2)
RθJC(Diode)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
1
G
E
Ratings
600
± 20
40
20
60
20
10
60
208
83
-55 to +150
-55 to +150
300
Ratings
0.6
2.6
Typ.
75
Units
V
V
A
A
A
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
Units
oC/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGB20N60SFD_F085 Datasheet

20A Field Stop IGBT

No Preview Available !

Package Marking and Ordering Information
Device Marking
Device
FGB20N60SFD FGB20N60SFD_F085
Package
TO-263
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ΔBVCES
ΔTJ
ICES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250μA
VGE = 0V, IC = 250μA
Collector Cut-Off Current
VCE = VCES, VGE = 0V
IGES
G-E Leakage Current
ICES at 80%*BVCES, 150oC
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250μA, VCE = VGE
IC = 20A, VGE = 15V
ITCC==2102A5,oVCGE = 15V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 20A,
RG = 10Ω, VGE
Inductive Load,
= 15V,
TC = 25oC
VCC = 400V, IC = 20A,
RG = 10Ω, VGE
Inductive Load,
= 15V,
TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
600 - - V
- 0.79 - V/oC
- - 250
μA
- - 250
-
-
±400
nA
4.0 4.8 6.5
- 2.2 2.85
- 2.4 -
V
V
V
-
940 1250
pF
-
110 146
pF
-
40 53
pF
-
10 13
ns
-
16 21
ns
-
90 120
ns
-
24 36
ns
-
0.31 0.41
mJ
-
0.13 0.21
mJ
-
0.44 0.59
mJ
-
12 16
ns
-
16 21
ns
-
95 126
ns
-
28 43
ns
-
0.45 0.60
mJ
-
0.21 0.38
mJ
-
0.66 0.88
mJ
- 63 95 nC
- 7 11 nC
- 32 48 nC
©2013 Fairchild Semiconductor Corporation
FGB20N60SFD_F085 Rev. C1
2
www.fairchildsemi.com


Part Number FGB20N60SFD_F085
Description 20A Field Stop IGBT
Maker Fairchild Semiconductor
Total Page 9 Pages
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