900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

FGB20N6S2D Datasheet

600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

No Preview Available !

July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
• Soft Recovery Diode
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
Symbol
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
C
G
G
E
E
Device Maximum Ratings TC= 25°C unless otherwise noted
COLLECTOR (FLANGE)
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
28 A
IC110
Collector Current Continuous, TC = 110°C
13 A
ICM Collector Current Pulsed (Note 1)
40 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35A at 600V
A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
PD Power Dissipation Total TC = 25°C
125 W
Power Dissipation Derating TC > 25°C
1.0 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1


Fairchild Semiconductor Electronic Components Datasheet

FGB20N6S2D Datasheet

600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

No Preview Available !

Package Marking and Ordering Information
Device Marking
20N6S2D
20N6S2D
20N6S2D
20N6S2D
Device
FGH20N6S2D
FGP20N6S2D
FGB20N6S2D
FGB20N6S2DT
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Tape Width
N/A
N/A
N/A
24mm
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
IGES Gate to Emitter Leakage Current
On State Characteristics
IC = 250µA, VGE = 0
VCE = 600V TJ = 25°C
TJ = 125°C
VGE = ± 20V
600
-
-
-
VCE(SAT) Collector to Emitter Saturation Voltage
VEC Diode Forward Voltage
Dynamic Characteristics
IC = 7.0A,
VGE = 15V
IEC = 7.0A
TJ = 25°C
TJ = 125°C
-
-
-
QG(ON) Gate Charge
VGE(TH)
VGEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Switching Characteristics
IC = 7.0A,
VCE = 300V
VGE = 15V
VGE = 20V
IC = 250µA, VCE = 600V
IC = 7.0A, VCE = 300V
-
-
3.5
-
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
trr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Diode Reverse Recovery Time
Thermal Characteristics
TJ = 150°C, RG = 25Ω, VGE =
15V, L = 0.5mH VCE = 600V
IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25
L = 0.5mH
Test Circuit - Figure 26
IGBT and Diode at TJ = 125°C
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25
L = 0.5mH
Test Circuit - Figure 26
IEC = 7A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RθJC Thermal Resistance Junction-Case
IGBT
Diode
-
Typ
-
-
-
-
2.2
1.9
1.9
30
38
4.3
6.5
-
7.7
4.5
87
50
25
85
58
7
4.5
120
85
20
125
135
26
20
-
Quantity
30
50
50
800 units
Max Units
-
250
2.0
±250
V
µA
mA
nA
2.7 V
2.2 V
2.7 V
36 nC
45 nC
5.0 V
8.0 V
-A
- ns
- ns
- ns
- ns
- µJ
- µJ
75 µJ
- ns
- ns
145 ns
105 ns
- µJ
140 µJ
180 µJ
31 ns
24 ns
1.0 °C/W
2.2 °C/W
NOTE:
1ao.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduOironNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny6p.foicratlhdeiocdoenvisenuiseendceinotfhtehetecsitrccuirictuditeasnigdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
2tJh.EeTDuiErnnpC-uOStfftpauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesuretrhetemheienntcetogollrfeaPcl otoowfretchrueDrrienevsnittcaeenqTtauunarenlso-OuzesffrpSoow(wIiCtecErhi=lnogs0sALs)o.tsaAsr.ltliTndhgeivsaitcteethsstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1


Part Number FGB20N6S2D
Description 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
Maker Fairchild Semiconductor
Total Page 9 Pages
PDF Download

FGB20N6S2D Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FGB20N6S2 600V/ SMPS II Series N-Channel IGBT
Fairchild Semiconductor
2 FGB20N6S2D 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
Fairchild Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy