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Fairchild Semiconductor Electronic Components Datasheet

FGB20N6S2 Datasheet

600V/ SMPS II Series N-Channel IGBT

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August 2003
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
G
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
COLLECTOR
(Flange)
E
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
28 A
IC110
Collector Current Continuous, TC = 110°C
13 A
ICM Collector Current Pulsed (Note 1)
40 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35 at 600V
A
EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
EARV
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V
100 mJ
PD Power Dissipation Total TC = 25°C
125 W
Power Dissipation Derating TC > 25°C
1.0 W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2


Fairchild Semiconductor Electronic Components Datasheet

FGB20N6S2 Datasheet

600V/ SMPS II Series N-Channel IGBT

No Preview Available !

Package Marking and Ordering Information
Device Marking
20N6S2
20N6S2
20N6S2
20N6S2
Device
FGH20N6S2
FGP20N6S2
FGB20N6S2
FGB20N6S2T
Package
TO-247
TO-220AB
TO-263AB
TO-263AB
Reel Size
Tube
Tube
Tube
330mm
Tape Width
N/A
N/A
N/A
24mm
Quantity
30 Units
50 Units
50 Units
800 Units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
BVCES
BVECS
ICES
IGES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0
Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0
Collector to Emitter Leakage Current VCE = 600V TJ = 25°C
TJ = 125°C
Gate to Emitter Leakage Current
VGE = ± 20V
600 - - V
20 - - V
- - 250 µA
- - 2.0 mA
- - ±250 nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 7.0A,
VGE = 15V
TJ = 25°C
TJ = 125°C
-
2.2 2.7
V
-
1.9 2.2
V
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
IC = 7.0A,
VCE = 300V
VGE = 15V
VGE = 20V
IC = 250µA, VCE = 600V
IC = 7.0A, VCE = 300V
- 30 36 nC
- 38 45 nC
3.5 4.3 5.0
V
-
6.5 8.0
V
Switching Characteristics
SSOA Switching SOA
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 1)
Turn-On Energy (Note 1)
Turn-Off Energy (Note 2)
TJ = 150°C, RG = 25Ω, VGE =
15V , L = 0.5mH, Vce = 600V
IGBT and Diode at TJ = 25°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25
L = 0.5mH
Test Circuit - Figure 20
IGBT and Diode at TJ = 125°C,
ICE = 7A,
VCE = 390V,
VGE = 15V,
RG = 25
L = 0.5mH
Test Circuit - Figure 20
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
7.7 -
4.5 -
87 -
50 -
25 -
85 -
58 75
7-
4.5 -
120 145
85 105
20 -
125 140
135 180
A
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
- - 1.0 °C/W
NOTE:
1ao.sfVtthaheleueIIGGsBBfoTTr.otTwnhloye.TEduiOronNd-2Oeinstytlpohesesistucsronpn-edocintiifoileondsssianwrfehigesunhroeaw2tny0p.foicratlhdeiocdoenvisenuiseendceinotfhtehetescitrcciurictuditeasingdnethr.eEdOioNd1eisisthaet
turn-on loss
the same TJ
2tJh.EeTDuiErnnpC-uOStffptauEnlnsdeearrgadynNdLooe.sn2sd4i(-nE1gOMaFeFt )tthhioseddpfeoofirinnMtewdeahasesurerthetemheienntcetogollrfeaPcl otoowfretchrueDrrienevsnittcaeenqTtauunarenls-oOuzefsfrSpoow(wIiCtecErhi=lnogs0sALos).tsaAsr.ltliTndhgeivsaictteetshstewmtreeartiehlinotgedspeterdodgdepueocr-f
es the true total Turn-Off Energy Loss.
©2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2


Part Number FGB20N6S2
Description 600V/ SMPS II Series N-Channel IGBT
Maker Fairchild Semiconductor
Total Page 8 Pages
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