FGB20N60SFD-F085 Datasheet | onsemi

Features - High current capability - Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A - High input impedance - Fast switching - Qualified to Automotive Requirements of AEC-Q101 - Ro HS plaint Applications - Inverters, SMPS, PFC, UPS - Automotive Chargers, Converters, High Voltage Auxiliaries General Description Using novel field-stop IGBT technology, ON Semiconductor’s new series of field-stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. D2-PAK GE Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM(1) PD TJ Tstg TL Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current @ TC = 25o C @ TC = 100o C Pulsed Collector Current Diode Forward Current Diode Forward Current @ TC = 25o C @ TC = 25o C @ TC = 100o C Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25o C @ TC = 100o C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter RθJC(IGBT) ( 2) Thermal Resistance, Junction to Case RθJC(Diode) Thermal Resistance, Junction to Case Symbol Parameter...