FDS86240 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
* Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
*.

Application

* DC/DC Converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24 V and.

Description

* Shielded Gate MOSFET Technology
* Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A
* Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling C.

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