FDS86141 mosfet equivalent, n-channel mosfet.
General Description
* Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
* Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A
* High performance trench technology for ex.
* DC-DC Conversion
D D D D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unles.
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