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FDS86140 - MOSFET

General Description

Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested

Key Features

  • General.

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Full PDF Text Transcription for FDS86140 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDS86140. For precise diagrams, and layout, please refer to the original PDF.

FDS86140 N-Channel PowerTrench® MOSFET March 2011 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description „ Max rDS(on) = 9.8 mΩ at VGS ...

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A, 9.8 mΩ Features General Description „ Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A „ High performance trench technologh for extremely low rDS(on) „ High power and current handing capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

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