FDS86140 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
* High performance trench technologh for .

Application

* DC/DC Converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* Primary Swith for 24 V and.

Description

* Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
* Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
* High performance trench technologh for extremely low rDS(on)
* High power and current handing capability in a widely used surface mount .

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