FDS86140
Features
General Description
- Max r DS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
- Max r DS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
- High performance trench technologh for extremely low r DS(on)
- High power and current handing capability in a widely used surface mount package
- 100% UIL Tested
- Ro HS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness.
Applications
- DC/DC Converters and Off-Line UPS
- Distributed Power Architectures and VRMs
- Primary Swith for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
SO-8
Pin 1
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source...
