FDS86140 Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching...
FDS86140 Key Features
- Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
- Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
- High performance trench technologh for extremely low rDS(on)
- High power and current handing capability in a widely used
- 100% UIL Tested
- RoHS pliant