FDS86242 mosfet equivalent, n-channel power mosfet.
General Description
* Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
* Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
* High performance trench technology for .
* DC/DC converters and Off-Line UPS
* Distributed Power Architectures and VRMs
* RoHS Compliant
* Prim.
* Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
* Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
* High performance trench technology for extremely low rDS(on)
This N -Channel MOSFET is produ ced using ON Semiconductor‘s advanced Power T .
Image gallery
TAGS