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FDS86140 - MOSFET

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FDS86140 Product details

Description

Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Ap

Features

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