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FDS86242 - N-Channel PowerTrench MOSFET

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FDS86242 Product details

Description

Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant

Features

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