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FDS8817NZ - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS8817NZ
Manufacturer	ON Semiconductor
File Size	297.20 KB
Description	N-Channel MOSFET
Datasheet	FDS8817NZ-ONSemiconductor.pdf

FDS8817NZ Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance.

Features

Max rDS(on) = 7 mW at VGS = 10 V, ID = 15 A.
Max rDS(on) = 10 mW at VGS = 4.5 V, ID = 12.6 A.
HBM ESD Protection Level of 3.8 kV Typical.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant Specifications MOSFET.

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Published: Dec 25, 2023 |