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FDS8813NZ - N-Channel MOSFET

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FDS8813NZ Product details

Description

Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A HBM ESD protection level of 5.6KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability RoHS compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device i

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