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FDS8842NZ - N-Channel MOSFET

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FDS8842NZ Product details

Description

Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant The FDS8842NZ has been designed to minimize losses in power conversion application.Advancements in both silicon and packa

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