Datasheet Details
| Part number | FDS86141 |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 327.05 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS86141-ONSemiconductor.pdf
|
| Part number | FDS86141 |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 327.05 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FDS86141-ONSemiconductor.pdf
|
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.Applications DC-DC Conversion D D D D SO-8 P
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