FDS86252 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
* Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
* High performance trench technology for .

Description

* Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
* Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount.

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