FDS2672 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A
* Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
* Fast Switching Speed
* High Performance Trench Technology.
* DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDS D.
This single N−Channel MOSFET is produced using onsemi’s
advanced UItraFET Trench process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 70 mW at VGS .
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