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FDS2070N7 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

  • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge (38nC typical).
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Dra.

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FDS2070N7 February 2004 FDS2070N7 150V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications • Synchronous rectifier • DC/DC converter Features • 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.
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