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Fairchild Semiconductor Electronic Components Datasheet

FDS2670 Datasheet

200V N-Channel PowerTrench MOSFET

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June 2000
PRELIMINARY
FDS2670
200V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
3.0 A, 200 V. RDS(ON) = 0.125 @ VGS = 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
D
D
SO-8
S SSG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2670
FDS2670
13’’
5
6
7
8
Ratings
200
±20
3.0
20
2.5
1.2
1.0
-55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS2670 Rev B(W)


Fairchild Semiconductor Electronic Components Datasheet

FDS2670 Datasheet

200V N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
===TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 160 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
200
V
214 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
===TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V,
ID = 3.0 A
VGS =10 V, ID =3.0 A, TJ =125°C
VGS = 10 V,
VDS = 10 V
VDS = 10 V,
ID = 3.0 A
2
20
4 4.5
V
–10 mV/°C
100 125 m
205 275
A
15 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 100 V,
f = 1.0 MHz
V GS = 0 V,
1228
112
17
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 100 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 100 V,
VGS = 10 V
ID = 3 A,
13 23
8 16
30 48
25 40
27 43
7
10
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.1 A (Note 2)
2.1
0.7 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 105°/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
FDS2670 Rev B(W)


Part Number FDS2670
Description 200V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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