FDS2070N3
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching, low gate charge (38nC typical)
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 6 7
