FDP2710-F085 datasheet, mosfet equivalent, ON Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 419.50KB)

Features and benefits

* Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
* Typ Qg(TOT) = 78nC at VGS = 10V
* Fast switching speed
* Low gate charge
* High performance trench techn.

Application

* PDP application
* Hybrid Electric Vehicle DC/DC converters
* High power and current handling capability .

Description

Features
* Typ rDS(on) = 38mΩ at VGS = 10V, ID = 50A
* Typ Qg(TOT) = 78nC at VGS = 10V
* Fast switching speed
* Low gate charge
* High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is produced usi.

Image gallery