FDP2614 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on).

Application

* Consumer Appliances
* Synchronous Rectification
* Battery Protection Circuit
* Motor Drives and Uninte.

Description

This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Consumer Appliances
* S.

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