FDP2614
Features
- RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench technology for Extremely Low
RDS(on)
- High Power and Current Handing Capability
- Ro HS pliant
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS VGS ID
IDM EAS dv/dt PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C)
- Derate above 25°C
(Note 1) (Note 2) (Note 3)
TJ, TSTG...
