Datasheet Summary
- N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
- RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench technology for Extremely Low
RDS(on)
- High Power and Current Handing Capability
- RoHS pliant
General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power...
