FDP2710 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench technology for Extremely Low RDS(on).

Application

* Consumer Appliances
* Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless oth.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Consumer Appliances
* .

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