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FDP22N50N - MOSFET

Description

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Features

  • RDS(on) = 185 mΩ (Typ. ) @ VGS = 10 V, ID = 11 A.
  • Low Gate Charge (Typ. 49 nC).
  • Low Crss (Typ. 24 pF).
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP22N50N — N-Channel UniFETTM II MOSFET FDP22N50N N-Channel UniFETTM II MOSFET 500 V, 22 A, 220 mΩ Features • RDS(on) = 185 mΩ (Typ.) @ VGS = 10 V, ID = 11 A • Low Gate Charge (Typ. 49 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • Improve dv/dt Capability • RoHS Compliant Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
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