FDP20N50 - N-Channel MOSFET

onsemi

General Description

based on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 200 mW (Typ. ) @ VGS = 10 V, ID = 10 A.
Low Gate Charge (Typ. 45.6 nC).
Low Crss (Typ. 27 pF).
100% Avalanche Tested.

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FDP20N50 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDP20N50
Manufacturer	onsemi
File Size	410.85 KB
Description	N-Channel MOSFET
Datasheet	FDP20N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETE 500 V, 20 A, 230 mW FDP20N50 / FDPF20N50 / FDPF20N50T Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 200 mW (Typ.) @ VGS = 10 V, ID = 10 A • Low Gate Charge (Typ. 45.6 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC−DC Power Supply DATA SHEET www.onsemi.