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Fairchild Semiconductor Electronic Components Datasheet

FDP2572 Datasheet

N-Channel PowerTrench MOSFET 150V/ 29A/ 54m

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September 2002
FDB2572 / FDP2572
N-Channel PowerTrench® MOSFET
150V, 29A, 54m
Features
• rDS(ON) = 45m(Typ.), VGS = 10V, ID = 9A
• Qg(tot) = 26nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82860
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
SOURCE
DRAIN
(FLANGE)
DRAIN
GATE
GATE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
TO-263AB
FDB SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
G
Ratings
150
±20
29
20
4
Figure 4
36
135
0.9
-55 to 175
1.11
62
43
D
S
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

FDP2572 Datasheet

N-Channel PowerTrench MOSFET 150V/ 29A/ 54m

No Preview Available !

Package Marking and Ordering Information
Device Marking
FDB2572
FDP2572
Device
FDB2572
FDP2572
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 120V
VGS = 0V
TC = 150o
VGS = ±20V
150
-
-
-
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
2 - 4V
ID=9A, VGS=10V
- 0.045 0.054
ID = 4A, VGS = 6V,
- 0.050 0.075
ID=9A, VGS=10V, TC=175oC - 0.126 0.146
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 75V
ID = 9A
Ig = 1.0mA
-
-
-
-
-
-
-
-
1770
183
40
26
3.3
8
5
6
-
-
-
34
4.3
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Resistive Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 75V, ID = 9A
VGS = 10V, RGS = 11.0
tf Fall Time
tOFF
Turn-Off Time
- - 36 ns
- 11 - ns
- 14 - ns
- 31 - ns
- 14 - ns
- - 66 ns
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.2mH, IAS = 19A.
2: Pulse Width = 100s
ISD = 9A
ISD = 4A
ISD = 9A, dISD/dt =100A/µs
ISD = 9A, dISD/dt =100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 74 ns
- 169 nC
©2002 Fairchild Semiconductor Corporation
FDB2572 / FDP2572 Rev. B


Part Number FDP2572
Description N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
Maker Fairchild Semiconductor
Total Page 11 Pages
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